dated : 23/06/2007 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) sd101a (1n6263)...SD101C silicon schottky barrier diodes for general purpose applications the sd101 series is a meta l on silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications. the sd101a is equivalent to the 1n6263. this diode is also available in minimelf case with type designation ll101a, b, c. absolute maximum ratings (t a = 25 o c) parameter symbol value unit peak reverse voltage sd101a sd101b SD101C v rrm 60 50 40 v power dissipation p tot 400 1) mw maximum single cycle surge, 10 s square wave i fsm 2 a junction temperature t j 200 o c storage temperature range t s - 55 to + 200 o c 1) valid provided the leads direct at the case are kept at ambient temperature. characteristics at t a = 25 o c parameter symbol min. max. unit reverse breakdown voltage at i r = 10 a sd101a sd101b SD101C v (br)r 60 50 40 - - - v forward voltage at i f = 1 ma at i f = 15 ma sd101a sd101b SD101C sd101a sd101b SD101C v f - - - - - - 0.41 0.4 0.39 1 0.95 0.9 v reverse leakage current at v r = 50 v at v r = 40 v at v r = 30 v sd101a sd101b SD101C i r - 200 na junction capacitance at v r = 0 v, f = 1 mhz sd101a sd101b SD101C c tot - - - 2 2.1 2.2 pf reverse recovery time at i f = i r = 5 ma , recover to 0.1 i r t rr - 1 ns max. 3.9 max. 1.9 glass case do-35 max. 0.5 min. 27.5 min. 27.5 xxx cathode band part no. st "st" brand dimensions in mm black black black
dated : 23/06/2007 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) typical forward conduction curve of combination schottky barrier and pn junction guard ring 100 80 60 40 0 0 0.5 1v 0 100 30 50v v r i r typical variation of reverse current at various temperatures ma a 10 1 0.1 5 2 0.01 0 0 20 50v pf 1 2 c t typical capacitance curve as a function of reverse voltage v r 0.01 0.1 0 0.5 1v ma 1 10 i f sd101 typical variation of fwd. current vs. fwd. voltage for primary conduction through the schottky barrier 5 2 v f 5 2 5 2 a b c 20 i f v f a b c 10 20 40 5 2 5 2 5 2 150 c o 125 c o 100 c o 75 c o 50 c o 25 c o 10 30 40 c a b tj=25 c o sd101 sd101 sd101 sd101a (1n6263)...SD101C
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